Please use this identifier to cite or link to this item: http://dspace.cus.ac.in/jspui/handle/1/6792
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dc.contributor.authorManikanthababu, N-
dc.contributor.authorSaikiran, V-
dc.contributor.authorBasu, T-
dc.contributor.authorPrajna, K-
dc.contributor.authorVajandar, S-
dc.contributor.authorPathak, A. P-
dc.contributor.authorPanigrahi, B. K-
dc.contributor.authorOsipowicz, T.-
dc.contributor.authorRao, S. V. S. Nageswara-
dc.date.accessioned2020-08-10T05:49:50Z-
dc.date.available2020-08-10T05:49:50Z-
dc.date.issued2019-07-31-
dc.identifier.citationThin Solid Films 682, 2019: 156-162en_US
dc.identifier.urihttp://dspace.cus.ac.in/jspui/handle/1/6792-
dc.titleEffects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitorsen_US
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