Please use this identifier to cite or link to this item: http://dspace.cus.ac.in/jspui/handle/1/6373
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dc.contributor.authorManikanthababu, N.-
dc.contributor.authorSaikiran, V.-
dc.contributor.authorBasu, T.-
dc.contributor.authorPrajna, K.-
dc.contributor.authorVajandar, S.-
dc.contributor.authorPathak, A.P.-
dc.contributor.authorPanigrahi, B.K.-
dc.contributor.authorOsipowicz, T.-
dc.contributor.authorRao, S.V.S.N.-
dc.date.accessioned2019-10-01T10:29:15Z-
dc.date.available2019-10-01T10:29:15Z-
dc.date.issued2019-
dc.identifier.citationThin Solid Films 682 2019en_US
dc.identifier.issn406090-
dc.identifier.urihttp://dspace.cus.ac.in/jspui/handle/1/6373-
dc.language.isoenen_US
dc.titleEffects of ion irradiation on the structural and electrical properties of HfO <inf>2</inf> /SiON/Si p-metal oxide semiconductor capacitorsen_US
dc.typeArticleen_US
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